Influence of Built-In Drift Fields on the Performance of InP-Based HBTs Grown by Solid-Source MBE
Identifieur interne : 001977 ( Main/Repository ); précédent : 001976; suivant : 001978Influence of Built-In Drift Fields on the Performance of InP-Based HBTs Grown by Solid-Source MBE
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Abstract
The versatility of solid-source molecular beam epitaxy for the growth of InP/InGaAs heterojunction bipolar transistors (HBTs) is provided by its excellent control of doping and composition grading profiles in combination with its efficiency for carbon doping. Various designs using doping grading or composition grading in the base are investigated to provide a built-in quasi-electric field that enhances electron transport. All graded-base devices exhibit higher current gains (β), as compared to uniform-base structures, but the β improvements are found to be nonproportional to the generated built-in drift fields. The best performances are obtained with a 9% linear composition grading profile. As compared to conventionally grown uniform-base structures, the linearly graded-base HBTs show higher current gains (up to 42%), which is of particular importance particularly in analog and mixed-signal applications.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Influence of Built-In Drift Fields on the Performance of InP-Based HBTs Grown by Solid-Source MBE</title><author><name sortKey="Driad, Rachid" uniqKey="Driad R">Rachid Driad</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Fraunhofer Institute for Applied Solid State Physics</s1><s2>79108 Freiburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation></author><author><name sortKey="Aidam, Rolf" uniqKey="Aidam R">Rolf Aidam</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Fraunhofer Institute for Applied Solid State Physics</s1><s2>79108 Freiburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation></author><author><name>QUANKUI YANG</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Fraunhofer Institute for Applied Solid State Physics</s1><s2>79108 Freiburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0267519</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0267519 INIST</idno><idno type="RBID">Pascal:12-0267519</idno><idno type="wicri:Area/Main/Corpus">001C01</idno><idno type="wicri:Area/Main/Repository">001977</idno></publicationStmt><seriesStmt><idno type="ISSN">0018-9383</idno><title level="j" type="abbreviated">IEEE trans. electron devices</title><title level="j" type="main">I.E.E.E. transactions on electron devices</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Analog signal</term><term>Binary compound</term><term>Carbon</term><term>Current gain</term><term>Doping</term><term>Electric field</term><term>Heterojunction bipolar transistors</term><term>Indium phosphide</term><term>Microelectronic fabrication</term><term>Mixed signal circuit</term><term>Molecular beam epitaxy</term><term>Performance evaluation</term><term>Solid source molecular beam epitaxy</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Evaluation performance</term><term>Transistor bipolaire hétérojonction</term><term>Epitaxie jet moléculaire</term><term>Méthode SSMBE</term><term>Dopage</term><term>Champ électrique</term><term>Gain courant</term><term>Signal analogique</term><term>Circuit à signal mixte</term><term>Phosphure d'indium</term><term>Composé binaire</term><term>Carbone</term><term>Fabrication microélectronique</term><term>8115H</term><term>InP</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term><term>Carbone</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The versatility of solid-source molecular beam epitaxy for the growth of InP/InGaAs heterojunction bipolar transistors (HBTs) is provided by its excellent control of doping and composition grading profiles in combination with its efficiency for carbon doping. Various designs using doping grading or composition grading in the base are investigated to provide a built-in quasi-electric field that enhances electron transport. All graded-base devices exhibit higher current gains (β), as compared to uniform-base structures, but the β improvements are found to be nonproportional to the generated built-in drift fields. The best performances are obtained with a 9% linear composition grading profile. As compared to conventionally grown uniform-base structures, the linearly graded-base HBTs show higher current gains (up to 42%), which is of particular importance particularly in analog and mixed-signal applications.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0018-9383</s0></fA01><fA02 i1="01"><s0>IETDAI</s0></fA02><fA03 i2="1"><s0>IEEE trans. electron devices</s0></fA03><fA05><s2>59</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Influence of Built-In Drift Fields on the Performance of InP-Based HBTs Grown by Solid-Source MBE</s1></fA08><fA11 i1="01" i2="1"><s1>DRIAD (Rachid)</s1></fA11><fA11 i1="02" i2="1"><s1>AIDAM (Rolf)</s1></fA11><fA11 i1="03" i2="1"><s1>QUANKUI YANG</s1></fA11><fA14 i1="01"><s1>Fraunhofer Institute for Applied Solid State Physics</s1><s2>79108 Freiburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>1915-1920</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>222F3</s2><s5>354000508304890140</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. 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